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e g n-channel c * qualification standards can be found at http://www.irf.com/ ultrafast igbt with ultrafast soft recovery diode absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress rating s only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. exposure to absolute- maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratin gs are measured under board mounted and still air conditions. ambient temperature (t a ) is 25 c, unless otherwise specified. gc e g a te c o lle ctor e m itter automotive grade v ces = 600v v ce(on) typ. = 1.8v i c @t c =100c = 41a t j max = 175c

coolir igbt ? features ? designed and qualified for automotive applications ? ultra fast switching igbt:70-200khz ? extremely low switching losses ? maximum junction temperature 175 c ? square rbsoa ? positive v ce (on) temperature coefficient applications ? dc-dc converter ? pfc benefits ? optimized high frequency switching applications ? rugged transient performance for increased reliability ? excellent current sharing in parallel operation parameter max. units v ce s collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 62 i c @ t c = 100c continuous collector current 41 i nominal nominal current @ 200khz 20 i c m puls e collec tor current 84 i l m clamped inductive load current 112 i f @ t c = 25c diode continous forward current 46.1 i f @ t c = 100c diode continous forward current 30 i fr m maximum repetitive forward current 112 v ge gate-to-emitter voltage 20 v p d @ t c = 25c maximum power dissipation 625 p d @ t c = 100c maximum power dissipation 313 t j operating junction and t st g storage temperature range soldering temperature for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) thermal resistance parameter min. typ. max. units r jc (igbt) junction-to-case-(each igbt) ??? ??? 0.24 r jc (diode) junction-to-case-(each diode) ??? ??? 1.78 r cs case-to-sink (flat, greased surface) ??? 0.24 ??? r ja junction-to-ambient (typical socket mount) ??? ??? 40 ??? 6.0 (0.21) ??? g (oz) -55 to +175 c/w a w c

! to-247ac AUIRGP65G40D0 g c e to-247ad auirgf65g40d0 base p art number packa g e t yp e orderable part number form quantit y AUIRGP65G40D0 to-247ac tube 25 AUIRGP65G40D0 auirgf65g40d0 to-247ad tube 25 auirgf65g40d0 standard pack g c e

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electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v ( br ) ces collector-to-emitter breakdown voltage 600 ? ? v v ge = 0v, i c = 500a ? v ( br ) ces / ? t j temperature coeff. of breakdown voltage ? 0.18 ? v/c v ge = 0v, i c = 1.0ma (25c-175c) ?1.4? i c = 12a, v ge = 15v, t j = 25c ?1.82.2 i c = 20a, v ge = 15v, t j = 25c v ce ( on ) collector-to-emitter saturation voltage ? 1.9 ? i c = 12a, v ge = 15v, t j = 150c ?2.6? vi c = 20a, v ge = 15v, t j = 150c ?2.2? i c = 12a, v ge = 15v, t j = 175c ?3.0? i c = 20a, v ge = 15v, t j = 175c v ge ( th ) gate threshold voltage 3.0 ? 5.5 v v ce = v ge , i c = 250a ? v ge ( th ) / ? tj threshold voltage temp. coefficient ? -12 ? mv/c v ce = v ge , i c = 1.0ma (25c - 175c) gfe forward transconductance ? 36 ? s v ce = 50v, i c = 20a i ces collector-to-emitter leakage current ? 3.2 25 a v ge = 0v, v ce = 600v ?0.81? mav ge = 0v, v ce = 600v, t j = 175c v fm diode forward voltage drop ? 1.7 2.45 v i f = 20a ?1.4? i f = 20a, t j = 175c i ges gate-to-emitter leakage current ? ? 100 na v ge = 20v switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge (turn-on) ? 180 270 i c = 20a q g e gate-to-emitter charge (turn-on) ? 28 42 nc v ge = 15v q g c gate-to-collector charge (turn-on) ? 64 96 v cc = 400v e on turn-on switching loss ? 298 389 i c = 20a, v cc = 400v, v ge = 15v e off turn-off switching loss ? 147 234 j r g = 4.7 ? , l = 485h, t j = 25c e total total switching loss ? 445 623 energy losses include tail & diode reverse recovery t d ( on ) turn-on delay time ? 35 53 i c = 20a, v cc = 400v, v ge = 15v t r rise time ?1229nsr g = 4.7 ? , l = 485h, t j = 25c t d ( off ) turn-off delay time ? 142 163 t f fall time ? 15 32 e on turn-on switching loss ? 630 ? i c = 20a, v cc = 400v, v ge =15v e off turn-off switching loss ? 137 ? j r g = 4.7 ? , l = 485h, t j = 175c e total total switching loss ? 767 ? energy losses include tail & diode reverse recovery t d ( on ) turn-on delay time ? 33 ? i c = 20a, v cc = 400v, v ge = 15v t r rise time ? 12 ? ns r g = 4.7 ? , l = 485h t d ( off ) turn-off delay time ? 165 ? t j = 175c t f fall time ? 16 ? c ies input capacitance ? 4673 ? pf v ge = 0v c oes output capacitance ? 337 ? v cc = 30v c res reverse transfer capacitance ? 58 ? f = 1.0mhz c oes eff. effective output capacitance (time related) ? 406 ? v ge = 0v, v ce = 0v to 480v c oes eff. (er) effective output capacitance (energy related) ? 162 ? t j = 175c, i c = 80a rbsoa reverse bias safe operating area full square v cc = 480v, vp 600v rg = 4.7 ? , v ge = +20v to 0v t r r diode reverse recovery time ? 41 ? ns t j = 25c i f = 20a, v r = 200v, ?70? t j = 125c di/dt = 200a/s q rr diode reverse recovery charge ? 116 ? nc t j = 25c i f = 20a, v r = 200v, ? 580 ? t j = 125c di/dt = 200a/s i r r peak reverse recovery current ? 4.8 ? a t j = 25c i f = 20a, v r = 200v, ?7.2? t j = 125c di/dt = 200a/s conditions through are on page 13
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fig. 2 - maximum dc collector current vs. case temperature fig. 3 - power dissipation vs. case temperature 25 50 75 100 125 150 175 t c (c) 0 10 20 30 40 50 60 70 i c ( a ) 25 50 75 100 125 150 175 t c (c) 0 100 200 300 400 500 600 700 p t o t ( w ) fig. 5 - reverse bias soa t j = 175c; v ge =20v 10 100 1000 v ce (v) 1 10 100 1000 i c ( a ) #$%& '()% * & '+ ,
- # ./ $ +0'1$ 20'13 +3 1 10 100 f , frequency ( khz ) 30 40 50 60 70 80 90 100 l o a d c u r r e n t ( a ) for both: duty cycle : 50% tj = 175c gate drive as specified tc = 110c tc = 80c i square wave: v cc diode as specified 1 10 100 1000 v ce , collector-to-emitter voltage (v) 0.01 0.1 1 10 100 1000 i c , c o l l e c t o r - t o - e m i t t e r c u r r e n t ( a ) tc = 25c tj = 175c sing le pulse 1msec 10msec operation in this area li mi t ed by v ce (on) 100 sec dc
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fig. 10 - typical v ce vs. v ge t j = 25c fig. 11 - typical v ce vs. v ge t j = 175c fig. 9 - typ. transfer characteristics v ce = 50v; tp = 30s 0246810 v ge, gate-to-emitter voltage (v) 0 20 40 60 80 100 i c , c o l l e c t o r - t o - e m i t t e r c u r r e n t ( a ) t j = 25c t j = 175c 5 101520 v ge (v) 0 2 4 6 8 10 v c e ( v ) i ce = 10a i ce = 20a i ce = 40a 5 101520 v ge (v) 0 2 4 6 8 10 v c e ( v ) i ce = 10a i ce = 20a i ce = 40a fig. 8 - typ. igbt output characteristics t j = 175c; tp = 30s 0 2 4 6 8 10 v ce (v) 0 20 40 60 80 100 i c e ( a ) vge = 18v vge = 15v vge = 12v vge = 10v vge = 9.0v vge = 8.0v vge = 7.0v vge = 6.5v vge = 6.0v fig. 7 - typ. igbt output characteristics t j = 25c; tp = 30s 0 2 4 6 8 10 v ce (v) 0 20 40 60 80 100 i c e ( a ) vge = 18v vge = 15v vge = 12v vge = 10v vge = 9.0v vge = 8.0v vge = 7.0v vge = 6.5v vge = 6.0v fig. 6 - typ. igbt output characteristics t j = -40c; tp = 30s 0 2 4 6 8 10 v ce (v) 0 20 40 60 80 100 i c e ( a ) vge = 18v vge = 15v vge = 12v vge = 10v vge = 9.0v vge = 8.0v vge = 7.0v vge = 6.5v vge = 6.0v

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fig. 15 - typ. energy loss vs. r g t j = 175c; l = 0.49mh; v ce = 400v, i ce = 20a; v ge = 15v 0 20 40 60 80 100 120 r g ( ? ) 0 200 400 600 800 1000 1200 1400 1600 1800 e n e r g y ( j ) e off e on fig. 13 - typ. energy loss vs. i c t j = 175c; l = 0.49mh; v ce = 400v, r g = 4.7 ? ; v ge = 15v fig. 14 - typ. switching time vs. i c t j = 175c; l = 0.49mh; v ce = 400v, r g = 4.7 ? ; v ge = 15v 0 5 10 15 20 25 30 35 40 i c (a) 0 200 400 600 800 1000 1200 1400 1600 e n e r g y ( j ) e off e on 0 10 20 30 40 50 i c (a) 1 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on fig. 17 - typ. output capacitance stored energy vs. v ce 0 100 200 300 400 500 600 700 voltage (v) 0 5 10 15 20 25 30 35 e o e s ( j ) fig. 16 - typ. switching time vs. r g t j = 175c; l = 0.49mh; v ce = 400v, i ce = 20a; v ge = 15v 0 20 40 60 80 100 120 r g ( ? ) 10 100 1000 10000 s w i c h i n g t i m e ( n s ) t r td off t f td on fig. 12 - typ. diode forward characteristics tp = 30s 0.0 1.0 2.0 3.0 v f (v) 0 20 40 60 80 100 i f ( a ) t j = 25c t j =175c
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fig. 18 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz 0 100 200 300 400 500 v ce (v) 10 100 1000 10000 100000 c a p a c i t a n c e ( p f ) cies coes cres fig. 19 - typical gate charge vs. v ge i ce = 20a; l = 200h 0 50 100 150 200 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ces = 400v fig. 20 - typ. diode i rr vs. r g t j = 175c 0 10 20 30 40 50 60 r g ( ?) 20 25 30 35 40 45 50 i r r ( a )
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6( 6! 100 1000 di f /dt (a/s) 0 20 40 60 80 100 120 t r r ( n s ) v r = 200v t j = 25c _____ t j = 125c ---------- i f = 40a i f = 20a i f = 10a 100 1000 di f /dt (a/s) 0 5 10 15 20 25 30 i r r m ( a ) i f = 40a i f = 20a i f = 10a v r = 200v t j = 25c _____ t j = 125c ---------- 100 1000 di f /dt (a/s) 0 200 400 600 800 1000 1200 1400 1600 q r r ( n c ) i f = 40a i f = 20a i f = 10a v r = 200v t j = 25c _____ t j = 125c ---------- 100 1000 di f /dt (a/s) 0 400 800 1200 1600 2000 d i ( r e c ) m / d t ( a / s ) i f = 40a i f = 20a i f = 10a v r = 200v t j = 25c _____ t j = 125c ----------

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fig. 26. maximum transient thermal impedance, junction-to-case (diode) fig 25. maximum transient thermal impedance, junction-to-case (igbt) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 ri (c/w) i (sec) 0.00604 0.000009 0.05590 0.000119 0.10879 0.003033 0.07706 0.018527 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 ri (c/w) i (sec) 0.04565 0.000043 0.60669 0.000490 0.65528 0.004983 0.38139 0.041994
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fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit 0 1k vcc dut l l rg 80 v dut vcc + - fig.c.t.5 - resistive load circuit rg vcc dut r = vcc icm fig.c.t.3 - s.c. soa circuit dc 4x dut vcc scsoa fig.c.t.4 - switching loss circuit l rg vcc dut / driver diode clamp / dut -5v

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fig. wf1 - typ. turn-off loss waveform @ t j = 175c using fig. ct.4 fig. wf2 - typ. turn-on loss waveform @ t j = 175c using fig. ct.4 fig. wf3 - reverse recovery waveform and definitions

t a t b t rr q rr i f i rrm i rrm 0.5 di(rec)m/dt 0.75 i rrm 5 4 3 2 0 1 di /dt f
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-100 0 100 200 300 400 500 600 700 -0.2 -0.1 0 0.1 0.2 0.3 time(s) v ce (v) -10 0 10 20 30 40 50 60 70 i ce (a) 90% i ce 5% v ce 10% i ce eoff tf -100 0 100 200 300 400 500 600 700 -0.2 -0.1 0 0.1 0.2 0.3 time (s) v ce (v) -10 0 10 20 30 40 50 60 70 i ce (a) test cur r e nt 90% test current 10% test current tr eon loss 5% v ce

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>>a77( 7 notes: v cc = 80% (v ces ), v ge = 20v, l = 485h, r g = 4.7 ?, tested in production i lm 400a. pulse width limited by max. junction temperature. refer to an-1086 for guidelines for measuring v (br)ces safely. r is measured at t j of approximately 90c. c oes eff. is a fixed capacitance that gives the same charging time as c oes while v ce is rising from 0 to 80% v ces . c oes eff.(er) is a fixed capacitance that stores the same energy as c oes while v ce is rising from 0 to 80% v ces .

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&'" qualification information ? moisture sensitivity level to-247ac n/a to-247ad n/a rohs compliant yes esd machine model class m4 (+/- 400v) ?? aec-q101-002 human body model class h3b (+/- 8000v) ?? aec-q101-001 charged device model class c5 (+/- 1000v) ?? aec-q101-005 qualification level automotive (per aec-q101) comments: this part number(s) passed automotive qualification. ir?s industrial and consumer qualification level is granted by extension of the higher automotive level.
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date comments 9/8/2015 ? removed "short circuit rating on page 1 & 2. revision history

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